Collector相关论文
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In order to prevent the corrosion of lead carbon battery cathode in sulfuric acid medium and the loss of active material......
Dust collection systems represent a significant portion of a wood product manufacturer’s total electricity use. The sys......
Exergy analysis is a critical aspect of Energy Engineering that can not be overstretched.The need for constant study in ......
本文对比分析了不同时间三磁精矿矿样的变化、得出了随着时间推移,焙烧磁选三磁精矿铁品位逐步下降,原矿中菱铁矿含量发生变化导致......
[单词识记]1.collect v.收集;搜集,collection n.收集,collector n.搜集者;收藏者2.pairn.一对;一双3.skaten.溜冰鞋,go skating去......
Three-dimensional porous composite framework assembled withCuO microspheres as anode current collect
The surface structure and material composition of current collectors have significant effects on the electrochemical per......
THE snuff bottle, a kind of handicraft introduced to China from abroad along with the habit of sniffing powdered tobacc......
The Songshan-Hanrong African Art Collection Museum recently opened its doors to the public in Changchun City,northeast C......
在青瓷之乡龙泉鹅庄,近来出现一幢墙面全部用古青瓷片装饰的楼房,古雅质朴,成为一道亮丽的风景。周姓房主数十年如一日收藏古青瓷......
Here we report a novel generation/collection operation mode of scanning electrochemical microscopy,in which a theta micr......
Absrtact: The principle of ZVS - PWM inverting circuit is first described by means of inverting welder supply. The contr......
六边形发射极的自对准 In Ga P/ Ga As异质结具有优异的直流和微波性能 .采用发射极面积为 2μm× 10μm的异质结双极型晶体管 ,VC......
介绍 L 波段、低偏置电压下工作的自对准 In Ga P/ Ga As功率异质结双极晶体管的研制 .在晶体管制作过程中采用了发射极 -基极金属......
Design and Fabrication of Novel Dual-Base Negative-Differential-Resistance Heterojunction Bipolar Tr
Based on planar Si dual-base transistor conception, a novel mesa dual-base heterojunc- tion bipolar transistor ( HBT) is......
Pu Guoyi, a well-known art collector in Chengdu, showed me around his deluxe residence where a considerable number of ar......
Based on the advantages of SOI technology, the frequency performance of SiGe HBT with SOI structure has been simulated. ......
Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical
High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devi......
In this paper,FXL-14 (tetradecyl iminobimetyl phosphonic acid) as a collector for floating wolframite without Pb~(2+) a......
Radiation damage of NPN transistors under different fluxes with electron energy of 1.5 MeV was investigated in this arti......
Investigation on the Flotation Mechanism of Tantalite-Niobite Minerals with Styrenephosphonic Acid C
The flotability and mechanism of the composite tantalite-niobite minerals which have different content of the Ta, Nb. F......
The effects of the composite-collector structure and the δ-doping density in InGaAs/InP DHBT on the Kirk current have b......
Small-signal model parameter extraction for microwave SiGe HBTs based on Y- and Z-parameter characte
High frequency intrinsic small-signal model parameter extraction for microwave SiGe heterojunction bipolar transistors i......
InP/InGaAs/InP double heterojunction bipolar transistors (DHBTs) were designed for wide band digital and analog circuits......
A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heteroju......
Based on the material characteristics and the operational principle of the double base epilayer BJTs,and according to th......
An InP/InGaAs single heterojunction bipolar transistor(SHBT) with high maximum oscillation frequency (f_(max)) and high ......
Influence of charge carrier injection at emitter electrode/emitter interface on the performance of m
Pentacene-based metal-base organic transistors(MBOTs) are fabricated.The influence of the charge carrier injection effic......
Using a Volterra series,an explicit formula is derived for the connection between input 3rd-order intercept point and co......
An investigation of ionization and displacement damage in silicon NPN bipolar junction transistors (BJTs) is presented.T......
Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs(111) B substrates via Au c......
Impact of doped boron concentration in emitter on high-and low-dose-rate damage in lateral PNP trans
The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or light......
An accumulation channel trench gate insulated gate bipolar transistor(ACT-IGBT) is proposed.The simulation results show ......
Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin fi
An analytical expression for the collector resistance of a novel vertical SiGe heterojunction bipolar transistor(HBT) on......
A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation
In this paper,we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fa......
The base-collector depletion capacitance for vertical SiGe npn heterojunction bipolar transistors (HBTs) on silicon on i......
Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-ins
In this paper, we propose an analytical avalanche multiplication model for the next generation of SiGe silicon- on-insul......
Silicon germanium(SiGe) heterojunction bipolar transistor(HBT) on thin silicon-on-insulator(SOI) has recently been demon......
Wolter I collector is the best collector for extreme ultraviolet (EUV) lithography, which has a series of nested mirrors......
Physical modeling based on hydrodynamic simulation for the design of InGaAs/InP double heterojunctio
A physical model for scaling and optimizing InGaAs/InP double heterojunction bipolar transistors(DHBTs) based on hydrody......
A single-event transient induced by a pulsed laser in a silicon-germanium heterojunction bipolar tra
A study on the single event transient (SET) induced by a pulsed laser in a silicon-germanium (SiGe) heterojunction bipol......
In the present paper we study the influences of the bias voltage and the external components on the damage progress of a......
A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain
In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and doub......
A novel advanced soft punch through(SPT) IGBT signed as SPTC-IGBT is investigated.Static and dynamic characteristics are......
The effect of dV/dt on the IGBT gate circuit in IPM is analyzed both by simulation and experiment.It is shown that a vol......
As is well known, there exists a tradeoff between the breakdown voltage BVCEOand the cut-off frequency fTfor a standard ......
The authors measured Pb isotope compositions of seven USGS rock reference standards, i.e. AGV-1, AGV-2, BHVO-1, BHVO-2,......
A novel reverse-conducting insulated-gate bipolar transistor(RC-IGBT) featuring a floating P-plug is proposed. The P-plu......
Collector optimization for improving the product of the breakdown voltage–cutoff frequency in SiGe H
Compared with BVceo,BVces is more related to collector optimization and more practical significance,so that BVces×fT ra......
